JPH0718764Y2 - 半導体単結晶育成装置 - Google Patents
半導体単結晶育成装置Info
- Publication number
- JPH0718764Y2 JPH0718764Y2 JP1988138797U JP13879788U JPH0718764Y2 JP H0718764 Y2 JPH0718764 Y2 JP H0718764Y2 JP 1988138797 U JP1988138797 U JP 1988138797U JP 13879788 U JP13879788 U JP 13879788U JP H0718764 Y2 JPH0718764 Y2 JP H0718764Y2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- crucible body
- raw material
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 48
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000002994 raw material Substances 0.000 claims description 28
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 239000000155 melt Substances 0.000 description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 16
- 229910052799 carbon Inorganic materials 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000009423 ventilation Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000003405 preventing effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988138797U JPH0718764Y2 (ja) | 1988-10-25 | 1988-10-25 | 半導体単結晶育成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988138797U JPH0718764Y2 (ja) | 1988-10-25 | 1988-10-25 | 半導体単結晶育成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0261964U JPH0261964U (en]) | 1990-05-09 |
| JPH0718764Y2 true JPH0718764Y2 (ja) | 1995-05-01 |
Family
ID=31401471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988138797U Expired - Lifetime JPH0718764Y2 (ja) | 1988-10-25 | 1988-10-25 | 半導体単結晶育成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0718764Y2 (en]) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61132583A (ja) * | 1984-11-30 | 1986-06-20 | Fujitsu Ltd | 半導体単結晶体の製造方法 |
-
1988
- 1988-10-25 JP JP1988138797U patent/JPH0718764Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0261964U (en]) | 1990-05-09 |
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